ATLAS Pixel - Test Beam Analysis

To Do list

Analysis


Items 1-4 are needed for the Pixel Detector Project, item 5 is related to GEANT4 studies, item 6 is related to understand irradiation effects on silicon.
  1. FE-I3
    1. understand plateau value of in-time efficiency
    2. noise, charge, (in-time) spatial resolution, long and ganged pixels characterization etc. etc.

    Milano

  2. First irradiated FE-I3 modules : efficiency?

    Given the very not-uniform irradiation and large dose variations even with a single chip:

    1. Efficiency vs irradiation dose (i.e. vs row number and for individual chips)
      This implies:
    2. Depletion vs irradiation dose (i.e. vs row number and for individual chips)
    3. Charge vs irradiation dose (i.e. vs row number and for individual chips)

    Milano

  3. High Intensity (Do we loose efficiency at high occupancy ?)
      Efficiency vs beam intensity
      Accurate studies need tracks reconstructed in pixel telescope and multi module treatment

    Prague, Milano, Genova

  4. Total collected Charge
    1. vs TOT calibration
      1. un-irradiated
      2. irradiated
    2. vs irradiation
    3. vs Sensor Producer

    Dortmund

  5. Interactions in silicon
    Genova
  6. Charge trapping
    Milano
Clara Troncon, INFN - Dipartimento di Fisica, via Celoria 16, 20133 Milano